Mihron Metalyx supplies gallium nitride (GaN) epiwafers to Canadian and US buyers from a bonded Toronto-area warehouse: GaN-on-SiC for RF and power HEMT devices, and GaN-on-sapphire for LED and optoelectronic work, in 2" to 6" diameters. Every lot ships with a Certificate of Analysis, quotes return within 48 hours, and Canadian buyers skip customs clearance entirely.
| Platform | Grades | Diameters | Typical applications |
|---|---|---|---|
| GaN-on-SiC | HEMT grade | 2" to 6" | 5G/RF power amplifiers, radar, high-voltage switching |
| GaN-on-sapphire | LED and HEMT grade | 2" to 6" | LEDs, microLED R&D, optoelectronics |
| Custom epitaxy | To your spec | Per grower | Layer structure, doping, and thickness coordinated directly with crystal growers |
| Related: 4H/6H SiC substrates | N-type, semi-insulating | 2" to 6" | Power devices, EV inverters — see wide bandgap catalog |
Need something not listed — free-standing GaN, specific buffer structures, or unusual substrates? Our sourcing network covers crystal growers in Japan, China, Europe, and the US; send the spec and we will source it.
Right here — Mihron Metalyx distributes GaN epiwafers from Toronto to all of North America. Submit specs via the quote form for pricing within 48 hours.
GaN-on-SiC offers superior thermal conductivity for RF power and high-voltage switching; GaN-on-sapphire is the cost-effective platform for LED and optoelectronic applications. Our team can review your device requirements — see also our SiC vs GaN technical guide.
Yes — research institutions across Canada and the US are core customers, and small R&D quantities are supported without minimum-order penalties on standard materials.
Ready for a GaN quote?
Send diameter, platform, grade, and quantity — pricing back within 48 hours.
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