GaN-on-Si Traction Inverter: What AVL and VisIC Show
Can GaN-on-silicon replace SiC in EV traction inverters? Not on current evidence. A new AVL and VisIC demonstrator shows GaN can run a traction inverter at 400V, but 800V GaN modules are still only planned. For wafer buyers, that means GaN-on-Si is a second path to qualify, not a reason to drop SiC.
What AVL and VisIC announced
In a PR Newswire release dated October 13, 2026, AVL and VisIC Technologies describe a demonstrator that combines a high-speed e-axle, power electronics and vehicle control. It uses a GaN traction inverter built on VisIC D3GaN GaN-on-Silicon power modules, an NXP driver and AVL’s PI850e Inverter Development Platform. The release gives no kW rating.
The companies report, from dyno WLTC testing at AVL facilities in Germany, “99.67% efficiency at 10 kHz and more than 99.8% at 5 kHz”, and “a reduction of inverter energy losses of more than 60% under the tested conditions” against comparable SiC inverters. These are company claims from bench testing, not production vehicle data.
Why 400V matters, and why 800V is the open question
The current focus is 400V battery vehicles, namely PHEV and range-extended HEV. The 800V GaN power modules are described as a planned extension. Tamara Baksht, VisIC CEO, says the demonstrator shows GaN “is no longer limited to discussing future potential.” AVL’s Mathias Deiml calls it “an important step in understanding the opportunities and challenges”, which is measured language for a platform still being assessed.
SiC vs GaN-on-Si for traction inverters
| Factor | SiC | GaN-on-Si (this demonstrator) |
|---|---|---|
| Substrate | Bulk SiC crystal | Silicon wafer with GaN epitaxial layers |
| Fab base | SiC-specific lines; 150mm volume standard, 200mm ramping | Release says compatible with 200 mm and 300 mm silicon foundries |
| Voltage status in this release | Incumbent platform | 400V demonstrated; 800V planned |
| Efficiency evidence | Comparison baseline | Company-reported dyno results |
| Production vehicle data | Not addressed in the release | Not in the release |
What changes for wafer buyers
GaN-on-Si moves part of the supply question from bulk SiC crystal growth to silicon substrates plus epitaxy, so epiwafer quality becomes the lever. Compatibility with 200 mm and 300 mm silicon foundries is the companies’ claim about the path to volume; it is not a delivery commitment. Similar GaN power work is under way elsewhere: Compound Semiconductor reported on October 13, 2026 that Navitas and NVIDIA are collaborating on a 24 kW board that converts 800 VDC to 12 VDC with a “target efficiency of 97% at full load”, using 16 NV6034 650 V, 18 mΩ GaNFast FETs. That is a data-centre board, not a traction inverter, but it shows GaN power design activity at 800V input.
A dual-path sourcing approach
- Keep SiC qualified: hold a second 150mm SiC source; see our 200mm vs 150mm SiC analysis and Wolfspeed loan analysis.
- Add a GaN-on-Si evaluation lot: buy small R&D quantities now, before a programme needs them.
- Agree specs in writing: diameter, epi layer structure, doping, thickness and a COA per lot; see the wafer specifications guide.
- Price the silicon side: substrate cost drivers are covered in silicon wafer pricing.
Mihron Metalyx is an independent distributor and does not supply VisIC or AVL. Our GaN wafers page lists GaN-on-SiC and GaN-on-sapphire epiwafers in 2" to 6", plus custom epitaxy sourced to your spec; GaN-on-Si is not a listed standard item, so send the spec for a sourcing quote. We supply SiC substrates up to 150mm and do not stock 200mm SiC. Background reading: SiC vs GaN.
Conclusion
The AVL and VisIC demonstrator is a credible 400V data point with company-reported efficiency gains. It is not proof of 800V readiness or of SiC displacement. Run both paths in qualification, and judge each on lot-level data.
Evaluating GaN or SiC wafers?
Send diameter, platform, layer spec and quantity. Mihron Metalyx replies within 48 hours with options from bonded Toronto stock or our sourcing network, with a Certificate of Analysis on every lot.
Request a quoteSources: AVL and VisIC release, PR Newswire, October 13, 2026; Compound Semiconductor, October 13, 2026 (Navitas/NVIDIA); Mihron Metalyx GaN wafers page.
Frequently asked questions
Is GaN-on-silicon ready for 800V EV traction inverters?
Not on the evidence in the AVL and VisIC release. The demonstrator targets 400V vehicles such as PHEV and range-extended HEV, and 800V GaN power modules are described as planned. The efficiency figures are company-reported dyno results, not production vehicle data.
Does GaN-on-Si reduce demand for SiC substrates?
Nothing in the release quantifies any effect on SiC demand. GaN-on-Si is compatible with 200 mm and 300 mm silicon foundries according to the companies, but 800V is unproven, so buyers should plan for both materials and revisit as production data appears.
What should procurement teams request from a GaN epiwafer supplier?
Ask for a Certificate of Analysis with every lot, the epi layer structure, doping and thickness, diameter and substrate type, and a small qualification lot before volume. Mihron Metalyx lists GaN-on-SiC and GaN-on-sapphire epiwafers and sources custom epitaxy to spec, with 48-hour quotes.